THE DEVELOPMENT OF NEW GENERATION POWER ELECTRONICS CIRCUIT
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Timing
- 1930: The published application of grid-controlled gas-filled tubes. (The mercury-arcrectifier and gas-filled thyratrons)
- 1930: The field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld.
- 1947: The point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen (Shockley 1972 & 1976), with William Shockley as an intensely interested observer.
- 1948: The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics.
- 1948: Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric.
- 1950: The semiconductor power diodes become available.
- 1957: The most popular member of the thyristor family - the SCR - was announced by General Electric, that semiconductor power electronics really began.
- 1969: The vertical V-groove MOSFET was published.
- 1970: The power FET development had spread worldwide with each year announcing a new technology.