Difference between revisions of "THE DEVELOPMENT OF NEW GENERATION POWER ELECTRONICS CIRCUIT"

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The new generations of the power electronics circuit has the trend of replacing the traditional power transformer and circuit. The reason is because of the new power electronics circuit has higher efficiency, switching ability and the most important is the smaller size and lighter weight therefore most of the energies convert into the power output instead of heat energy. It also means the size of the internal radiator is much smaller. It means this technology can be highly integrated into a small laptop and solves the heat and weight problem.


For more information: http://ece-www.colorado.edu/~pwrelect/book/slides/slidedir.html or Fundamental of power electronics.
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==Enabler==
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* Research and Development: Electronics/Electrical Engineers.
* The principle of capacitor charge balance theory.
* IC energy high power consumption.
* Traditional power transformer VS Power electronics transformer.
* High power efficiency η .
* Reducing heating problem.
* High speed transistor characteristics.
 
 
==Inhibitor==
* Harmonic distortion.
* High frequency duty cycle curse voltage unstable.
* Less flexibility of over load.
 
 
==Paradigm==
* The maximum power output is not that important any more. The efficiency η is going to take the place of leading the electronics products.
* “Less is more”, the quantity is not playing a major game any more. The quality will take the major position of the consumer electronics.
* Saving the energy. How to minimize the energy consumption and increase the functionalities? The percentage of the heat which is created by the voltage and current become more important.
 
 
==Expert==
TU-Delft- <br/>
Professor Sjoerd W.H. de Haan<br/>
Power electronics engineering <br/>
Room: LB 03.490 <br/>
Phone: (+31)(0)15 27 86239 <br/>
Telefax: (+31)(0)15 27 82968 <br/>
Link: http://www.ewi.tudelft.nl/live/pagina.jsp?id=ba41c8da-8e06-46a4-aae7-1dff9b39b9a3&lang=en <br/>


==Timing==
==Timing==
1930: The published application of grid-controlled gas-filled tubes. (The mercury-arcrectifier and gas-filled thyratrons)
* 1930: The published application of grid-controlled gas-filled tubes. (The mercury-arcrectifier and gas-filled thyratrons)
1930: The field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld,
* 1930: The field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld.
1947: The point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen (Shockley 1972 & 1976), with William Shockley as an intensely interested observer.  
* 1947: The point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen (Shockley 1972 & 1976), with William Shockley as an intensely interested observer.
1948: The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics.  
* 1948: The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics.  
1948: Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric.  
* 1948: Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric.  
1950: The semiconductor power diodes become available.
* 1950: The semiconductor power diodes become available.
1957: The most popular member of the thyristor family - the SCR - was announced by General Electric, that semiconductor power electronics really began.
* 1957: The most popular member of the thyristor family - the SCR - was announced by General Electric, that semiconductor power electronics really began.
1969: The vertical V-groove MOSFET was published.
* 1969: The vertical V-groove MOSFET was published.
1970: The power FET development had spread worldwide with each year announcing a new technology.
* 1970: The power FET development had spread worldwide with each year announcing a new technology.


==Web Resource==
==Web Resource==
* http://pemclab.cn.nctu.edu.tw/peclub/w3cnotes/cn06.%E9%9B%BB%E5%8A%9B%E9%9B%BB%E5%AD%90%E7%B0%A1%E4%BB%8B/html/cn06.htm
* http://pemclab.cn.nctu.edu.tw/peclub/w3cnotes/cn06.%E9%9B%BB%E5%8A%9B%E9%9B%BB%E5%AD%90%E7%B0%A1%E4%BB%8B/html/cn06.htm
* http://ece-www.colorado.edu/~pwrelect/book/slides/slidedir.html
* http://ece-www.colorado.edu/~pwrelect/book/slides/slidedir.html

Latest revision as of 20:38, 31 May 2010

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Timing

  • 1930: The published application of grid-controlled gas-filled tubes. (The mercury-arcrectifier and gas-filled thyratrons)
  • 1930: The field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld.
  • 1947: The point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen (Shockley 1972 & 1976), with William Shockley as an intensely interested observer.
  • 1948: The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics.
  • 1948: Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric.
  • 1950: The semiconductor power diodes become available.
  • 1957: The most popular member of the thyristor family - the SCR - was announced by General Electric, that semiconductor power electronics really began.
  • 1969: The vertical V-groove MOSFET was published.
  • 1970: The power FET development had spread worldwide with each year announcing a new technology.

Web Resource

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